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| Inchange Semiconductor www..com Product Specification Silicon NPN Power Transistors 3DD200 DESCRIPTION With TO-3 package High collector-base breakdown voltage : VCBO=250V APPLICATIONS For TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=75ae CONDITIONS Open emitter Open base Open collector VALUE 250 100 6 3 30 150 -55~150 ae ae UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 1.5 UNIT ae /W Inchange Semiconductor www..com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Fall time CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=250V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=5V IC=3A; IB1=0.2A; IB2=-0.3A 30 MIN 100 250 6 TYP. 3DD200 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE tf MAX UNIT V V V 1.5 1.5 0.5 0.1 120 1 |I V V mA mA s 2 Inchange Semiconductor www..com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 3DD200 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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